description/features www.irf.com 1 the 1n7078u3 center tap schottky rectifier has been expressly designed to meet the rigorous requirements of hirel environments. it is packaged in the hermetic surface mount smd-0.5 ceramic package. the device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. full mil-prf-19500 quality conformance testing is available on source control drawings to tx, txv and s quality levels. ? hermetically sealed ? low forward voltage drop ? high frequency operation ? guard ring for enhanced ruggedness and long reliabiltiy ? surface mount ? lightweight schottky rectifier 30amp, 30v 30sljq030 jans1n7078u3 jantx1n7078u3 jantxv1n7078u3 high efficiency series ref: mil-prf-19500/765 case style case outine and dimensions - smd-0.5 ? esd rating:class ns per mil-std-750, method 1020 major ratings and characteristics characteristics 1n7078u3 units i f(av) 30 a v rrm 30 v i fsm @ tp = 8.3ms half-sine 150 a v f @ 30apk, t j = 125c 0.57 v t j , t stg operating and storage -65 to 150 c pd-93966a
30sljq030, 1n7078u3 2 www.irf.com part number 1n7078u3 v r max. dc reverse voltage (v) v rwm max. working peak reverse voltage (v) voltage ratings 30 parameters limits units conditions i f(av) max. average forward current 30 a 50% duty cycle @ t c = 105c, square waveform see fig. 5 i fsm max. peak one cycle non - repetitive 150 a @ t p = 8.3 ms half-sine surge current absolute maximum ratings thermal-mechanical specifications parameters limits units conditions v fm max. forward voltage drop 0.58 v @ 15a see fig. 1 0.61 v @ 20a t j = -55c 0.67 v @ 30a 0.51 v @ 10a 0.55 v @ 20a t j = 25c 0.62 v @ 30a 0.41 v @ 15a 0.47 v @ 20a t j = 125c 0.57 v @ 30a i rm max. reverse leakage current 1.0 ma t j = 25c v r = rated v r see fig. 2 150 ma t j = 125c c t max. junction capacitance 2000 pf v r = 5v dc ( 1.0 mhz, 25c ) l s typical series inductance 4.8 nh measured from center of cathode pad to center of anode pad electrical specifications parameters limits units conditions t j max.junction temperature range -65 to 150 c t stg max. storage temperature range -65 to 150 c r thjc max. thermal resistance, junction 1.6 c/w dc operation see fig. 4 to case wt weight (typical) 1.0 g die size (typical) 115x170 mils case style smd-0.5 pulse width < 300s, duty cycle < 2% pins 2 and 3 externally tied together
30sljq030, 1n7078u3 www.irf.com 3 fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 1 - max. forward voltage drop characteristics 0.0 0.2 0.4 0.6 0.8 1.0 forward voltage drop - v f (v) 1 10 100 i n s t a n t a n e o u s f o r w a r d c u r r e n t - i f ( a ) tj = -55c tj = 125c tj = 25c 0 10 20 30 reverse voltage - v r (v) 0.01 0.1 1 10 100 1000 r e v e r s e c u r r e n t - i r ( m a ) 125c 75c 25c 100c 0 10 20 30 reverse voltage -v r (v) 100 1000 10000 j u n c t i o n c a p a c i t a n c e - c t ( p f ) t j = 25c
30sljq030, 1n7078u3 4 www.irf.com fig. 5 - max. allowable case temperature vs. average forward current fig. 4 - max. thermal impedance z thjc characteristics (per leg) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 03/2013 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) d = 0.4 d = 0.5 d = 0.01 d = 0.1 d = 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc d = 0.02 0 5 10 15 20 25 30 35 40 average forward current - i f(av) (a) 0 20 40 60 80 100 120 140 160 a l l o w a b l e c a s e t e m p e r a t u r e - ( c ) r t hjc = 1.6c/w 80 % square wave (d=0.50) rated v r applied dc
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